Vol. 332 no. 6035 pp. 1294-1297
DOI: 10.1126/science.1204428
Yu-Ming Lin,* Alberto Valdes-Garcia, Shu-Jen Han, Damon B. Farmer, Inanc Meric,†
Yanning Sun, Yanqing Wu, Christos Dimitrakopoulos, Alfred Grill,
Phaedon Avouris,* Keith A. Jenkins
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
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